Study of the transport properties of annealed „Ga,Mn...As by x-ray absorption spectroscopy
نویسندگان
چکیده
A systematic Mn L-edge x-ray absorption is carried out on carefully prepared Ga0.946Mn0.054As ferromagnetic semiconductors with varying As2/Ga flux ratio. It is found that the L3 peak of the absorption spectroscopy is enhanced after low temperature LT annealing. Furthermore it is shown that a more localized electronic structure nearly like the d5 high-spin state is obtained. It can be attributed to breaking the MnS–MnI pairs during the annealing process. Furthermore the authors present a direct evidence for a slightly increase of the Mn substitutional concentration due to LT annealing. © 2007 American Institute of Physics. DOI: 10.1063/1.2746070
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